Spin susceptibility and effective mass in shallow doubly doped semiconductor systems

Abstract

In light of a recent investigation of the conductivity and metal-insulator transition in the shallow double donor Si:P,As, the spin susceptibility g, and effective mass I of the systems Si:P,As and Si:P,Sb have been calculated. The electronic systems are described by a Gutzwiller scheme to finite temperature. The results for the doubly doped systems predict an enhancement of m and g, similar to that of the single-donor system Si:P in the vicinity of the transition.