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https://repositorio.ufba.br/handle/ri/13168
metadata.dc.type: | Artigo de Periódico |
Title: | Spin susceptibility and effective mass in shallow doubly doped semiconductor systems |
Other Titles: | Physical Review B |
Authors: | Silva, A. Ferreira da |
metadata.dc.creator: | Silva, A. Ferreira da |
Abstract: | In light of a recent investigation of the conductivity and metal-insulator transition in the shallow double donor Si:P,As, the spin susceptibility g, and effective mass I of the systems Si:P,As and Si:P,Sb have been calculated. The electronic systems are described by a Gutzwiller scheme to finite temperature. The results for the doubly doped systems predict an enhancement of m and g, similar to that of the single-donor system Si:P in the vicinity of the transition. |
Publisher: | Physical Review B |
URI: | http://www.repositorio.ufba.br/ri/handle/ri/13168 |
Issue Date: | 1991 |
Appears in Collections: | Artigo Publicado em Periódico (FIS) |
Files in This Item:
File | Description | Size | Format | |
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111111111111s.pdf | 126,82 kB | Adobe PDF | View/Open |
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