Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE

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metadata.dc.type:	Artigo de Periódico
Título :	Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE
Otros títulos :	Microelectronic Engineering
Autor :	Silva, A. Ferreira da Persson, C. Berggren, K. F. Pepe, Iuri Muniz Alves, A. Santos Oliveira, A. G. de
metadata.dc.creator:	Silva, A. Ferreira da Persson, C. Berggren, K. F. Pepe, Iuri Muniz Alves, A. Santos Oliveira, A. G. de
Resumen :	We have investigated the band gap shift of Si-doped AlxGa1−xAs alloys as a function of both silicon concentration and Al composition. Correlation and impurity scattering effects were included in the theoretical model. The optical absorption of Al0.3Ga0.7As:Si at the fundamental band gap energy has been measured by a photoacoustic spectroscopy technique. We found the energy gap at about 1.8 eV. The samples were grown by molecular beam epitaxy and the Al fraction was measured by reflection high energy electro-diffraction technique.
Palabras clave :	Doped AlGaAs alloys Band gap energy Photoacoustic spectroscopy Molecular beam epitaxy
Editorial :	Microelectronic Engineering
URI :	http://www.repositorio.ufba.br/ri/handle/ri/12687
Fecha de publicación :	1998
Aparece en las colecciones:	Artigo Publicado em Periódico (FIS)

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