Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE

Please use this identifier to cite or link to this item: https://repositorio.ufba.br/handle/ri/12687

metadata.dc.type:	Artigo de Periódico
Title:	Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE
Other Titles:	Microelectronic Engineering
Authors:	Silva, A. Ferreira da Persson, C. Berggren, K. F. Pepe, Iuri Muniz Alves, A. Santos Oliveira, A. G. de
metadata.dc.creator:	Silva, A. Ferreira da Persson, C. Berggren, K. F. Pepe, Iuri Muniz Alves, A. Santos Oliveira, A. G. de
Abstract:	We have investigated the band gap shift of Si-doped AlxGa1−xAs alloys as a function of both silicon concentration and Al composition. Correlation and impurity scattering effects were included in the theoretical model. The optical absorption of Al0.3Ga0.7As:Si at the fundamental band gap energy has been measured by a photoacoustic spectroscopy technique. We found the energy gap at about 1.8 eV. The samples were grown by molecular beam epitaxy and the Al fraction was measured by reflection high energy electro-diffraction technique.
Keywords:	Doped AlGaAs alloys Band gap energy Photoacoustic spectroscopy Molecular beam epitaxy
Publisher:	Microelectronic Engineering
URI:	http://www.repositorio.ufba.br/ri/handle/ri/12687
Issue Date:	1998
Appears in Collections:	Artigo Publicado em Periódico (FIS)

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