Please use this identifier to cite or link to this item: https://repositorio.ufba.br/handle/ri/7965
metadata.dc.type: Artigo de Periódico
Title: Characterization of asymmetric fragmentation patterns in SFM images of porous silicon
Other Titles: Solid State Communications
Authors: Silva, A. Ferreira da
Rosa, R.R.
Roman, L.S.
Veje, E.
Pepe, Iuri Muniz
metadata.dc.creator: Silva, A. Ferreira da
Rosa, R.R.
Roman, L.S.
Veje, E.
Pepe, Iuri Muniz
Abstract: Due to possible technological applications in opto-electronic devices, the interest in characterizing porous silicon structure patterns has recently increased. From scanning force microscopy (SFM) we have obtained images of different samples of porous silicon and applied pattern characterization operators on these matrices. In this paper, asymmetric spatial fragmentation in amplitude envelopes of porous silicon samples are characterized by means of a parameter that quantifies the amount of spatial asymmetry in the gradient field. The results show that this method is well suited to characterize silicon porosity quantitatively.
Keywords: A. Semiconductors
B. Nanofabrications
C. Crystal structure and symmetry
D. Optical properties
URI: http://www.repositorio.ufba.br/ri/handle/ri/7965
Issue Date: 2000
Appears in Collections:Artigo Publicado em Periódico (FIS)

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