Enhanced spin susceptibility in phosphorus-doped silicon

Please use this identifier to cite or link to this item: https://repositorio.ufba.br/handle/ri/13517

metadata.dc.type:	Artigo de Periódico
Title:	Enhanced spin susceptibility in phosphorus-doped silicon
Other Titles:	Physical Review B
Authors:	Silva, A. Ferreira da
metadata.dc.creator:	Silva, A. Ferreira da
Abstract:	The influence of the many-valley isotropic effect of the conduction band with a variational Xz dependence on the metal-nonmetal transition of doped semiconductors is investigated further in the calculation of spin susceptibility. A previously developed Gutzwiller method for finite temperature is used. Good agreement with experimental findings is found.
Publisher:	Physical Review B
URI:	http://repositorio.ufba.br/ri/handle/ri/13517
Issue Date:	1988
Appears in Collections:	Artigo Publicado em Periódico (FIS)

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