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Issue DateTitleAuthor(s)
2006Band gap energy determination by photoacoustic spectroscopy under continuous light excitationASTRATH, N. G. C.; PERSSON, C.; SILVA, A. Ferreira da; SATO, F.; PEDROCHI, F.; MEDINA, A. N.; Bento, Antonio Carlos
2000Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,BiAraújo, Carlos Moysés; Almeida, J. Souza de; Pepe, Iuri Muniz; Silva, A. Ferreira da; Sernelius, Bo E.; Souza, Joel Pereira de; Boudinov, Henri Ivanov
2000Characterization of asymmetric fragmentation patterns in SFM images of porous siliconSilva, A. Ferreira da; Rosa, R.R.; Roman, L.S.; Veje, E.; Pepe, Iuri Muniz
2008A conducting polymer–silicon heterojunction as a new ultraviolet photodetectorCárdenas, J. R.; Vasconcelos, Elder A. de; Azevedo, W. M. de; Silva, E. F. da; Pepe, Iuri Muniz; Silva, A. Ferreira da; Ribeiro, S. Santedicola; Silva, K. Abreu
1-Sep-2002Critical concentration for the doping-induced metal–nonmetal transition in cubic and hexagonal GaNSilva, A. Ferreira da; Persson, C.
2001Effective electron and hole masses in intrinsic and heavily n-type doped GaN and AlNSilva, A. Ferreira da; Persson, C.; Ahuja, Rajeev; Johansson, B.
2001Effective electronic masses in wurtzite and zinc-blende GaN and AlNPersson, C.; Silva, A. Ferreira da; Ahuja, Rajeev; Johansson, B.
Apr-2002Electrical field effects in n-type MOSFET and metal–nonmetal transitionAlmeida, J. Souza de; Araújo, Carlos Moysés; Pepe, Iuri Muniz; Silva, A. Ferreira da
2001Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systemsFernandez, J. R. L.; Araújo, Carlos Moysés; Silva, A. Ferreira da; Leite, J. R.; Sernelius, Bo E.; Pepe, Iuri Muniz
Apr-2002Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:SiAraújo, Carlos Moysés; Fernandez, J. R. L.; Silva, A. Ferreira da; Pepe, Iuri Muniz; Leite, J. R.; Sernelius, Bo E.; Persson, C.; As, D. J.
2004Electrical resistivity of acceptor carbon in GaAsSilva, A. Ferreira da; Sernelius, I.; Persson, C.; Ahuja, Rajeev; Pepe, Bo E.
2002Electric field effects in a two-dimensional Disordered Hubbard-Mott modelAlmeida, J. Souza de; Araújo, Carlos Moysés; Pepe, Iuri Muniz; Silva, A. Ferreira da
Dec-2002Electronic and optical properties of lead iodideAhuja, Rajeev; Arwin, Hans; Silva, A. Ferreira da; Araújo, Carlos Moysés; Veje, E.; Pepe, Iuri Muniz; Johansson, B.
2013Electronic properties of III-nitride semiconductors: A first-principles investigation using the Tran-Blaha modified Becke-Johnson potenAraujo, Rafael B.; Almeida, J. Souza de; Silva, A. Ferreira da
2011Energy-level and optical properties of nitrogen doped TiO2: An experimental and theoretical studyMeira, M. V. Castro; Almeida, J. Souza de; Borrero, P. P. González; Bernabé, H. S.; Astrath, N. G. C.; Bento, Antonio Carlos; Baesso, Mauro Luciano; Silva, A. Ferreira da
1988Enhanced spin susceptibility in phosphorus-doped siliconSilva, A. Ferreira da
2001First-principle calculations of optical properties of wurtzite AlN and GaNPersson, C.; Ahuja, Rajeev; Silva, A. Ferreira da; Johansson, B.
2001First-principle calculations of the dielectric function of zinc-blende and wurtzite InNAhuja, Rajeev; Persson, C.; Silva, A. Ferreira da; Johansson, B.
2013First-principles investigation of Li ion diffusion in Li2FeSiO4Araujo, Rafael B.; Scheicher, Ralph H.; Almeida, J. Souza de; Silva, A. Ferreira da; Ahuja, Rajeev
2013Half-filled orbital and unconventional geometry of a common dopant in Si(001)Iwaya, K.; Bowler, D. R.; Brázdová, V.; Silva, A. Ferreira da; Renner, Ch.; Wu, W.; Fisher, A. J.; Stoneham, A. M.; Aeppli, G.
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