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https://repositorio.ufba.br/handle/ri/8148
metadata.dc.type: | Artigo de Periódico |
Título : | An MOS transistor model for analog circuit design |
Otros títulos : | IEEE Journal of Solid-State Circuits |
Autor : | Cunha, Ana Isabela Araújo Schneider, Marcio Cherem Galup Montoro, Carlos |
metadata.dc.creator: | Cunha, Ana Isabela Araújo Schneider, Marcio Cherem Galup Montoro, Carlos |
Resumen : | This paper presents a physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model. |
Palabras clave : | Circuit modelin integrated circuit design MOS analog integrated circuits MOS devices |
URI : | http://www.repositorio.ufba.br/ri/handle/ri/8148 |
Fecha de publicación : | 1998 |
Aparece en las colecciones: | Artigo Publicado em Periódico (PPGEE) |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
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Cunha.pdf Restricted Access | 282,68 kB | Adobe PDF | Visualizar/Abrir Request a copy |
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