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metadata.dc.type: | Artigo de Periódico |
Title: | An MOS transistor model for analog circuit design |
Other Titles: | IEEE Journal of Solid-State Circuits |
Authors: | Cunha, Ana Isabela Araújo Schneider, Marcio Cherem Galup Montoro, Carlos |
metadata.dc.creator: | Cunha, Ana Isabela Araújo Schneider, Marcio Cherem Galup Montoro, Carlos |
Abstract: | This paper presents a physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model. |
Keywords: | Circuit modelin integrated circuit design MOS analog integrated circuits MOS devices |
URI: | http://www.repositorio.ufba.br/ri/handle/ri/8148 |
Issue Date: | 1998 |
Appears in Collections: | Artigo Publicado em Periódico (PPGEE) |
Files in This Item:
File | Description | Size | Format | |
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Cunha.pdf Restricted Access | 282,68 kB | Adobe PDF | View/Open Request a copy |
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