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https://repositorio.ufba.br/handle/ri/7535
metadata.dc.type: | Artigo de Periódico |
Título : | Electrical field effects in n-type MOSFET and metal–nonmetal transition |
Otros títulos : | Microelectronics Journal |
Autor : | Almeida, J. Souza de Araújo, Carlos Moysés Pepe, Iuri Muniz Silva, A. Ferreira da |
metadata.dc.creator: | Almeida, J. Souza de Araújo, Carlos Moysés Pepe, Iuri Muniz Silva, A. Ferreira da |
Resumen : | The effects of disorder, correlation, external electric field, impurity concentration, and impurity location near and at the Si/SiO2 interface of a metal-oxide semiconductor field effect transistor (MOSFET), have been investigated. The binding and correlation energies are strongly dependent on the electric field and impurity location. The Hubbard–Mott like model provides further evidence of a MNM transition in agreement with recent experimental findings. |
Palabras clave : | Metal–nonmetal transition Electric field Metal-oxide semiconductor field effect transistors |
URI : | http://www.repositorio.ufba.br/ri/handle/ri/7535 |
Fecha de publicación : | abr-2002 |
Aparece en las colecciones: | Artigo Publicado em Periódico (FIS) |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
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1-s2.0-S0026269201001343-main.pdf Restricted Access | 97,07 kB | Adobe PDF | Visualizar/Abrir Request a copy |
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