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https://repositorio.ufba.br/handle/ri/7535| metadata.dc.type: | Artigo de Periódico |
| Title: | Electrical field effects in n-type MOSFET and metal–nonmetal transition |
| Other Titles: | Microelectronics Journal |
| Authors: | Almeida, J. Souza de Araújo, Carlos Moysés Pepe, Iuri Muniz Silva, A. Ferreira da |
| metadata.dc.creator: | Almeida, J. Souza de Araújo, Carlos Moysés Pepe, Iuri Muniz Silva, A. Ferreira da |
| Abstract: | The effects of disorder, correlation, external electric field, impurity concentration, and impurity location near and at the Si/SiO2 interface of a metal-oxide semiconductor field effect transistor (MOSFET), have been investigated. The binding and correlation energies are strongly dependent on the electric field and impurity location. The Hubbard–Mott like model provides further evidence of a MNM transition in agreement with recent experimental findings. |
| Keywords: | Metal–nonmetal transition Electric field Metal-oxide semiconductor field effect transistors |
| URI: | http://www.repositorio.ufba.br/ri/handle/ri/7535 |
| Issue Date: | Apr-2002 |
| Appears in Collections: | Artigo Publicado em Periódico (FIS) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 1-s2.0-S0026269201001343-main.pdf Restricted Access | 97,07 kB | Adobe PDF | View/Open Request a copy |
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