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https://repositorio.ufba.br/handle/ri/4917
metadata.dc.type: | Artigo de Periódico |
Título : | Spectroscopy studies of 4H-SiC |
Otros títulos : | Materials Research |
Autor : | Oliveira, A. C. de Freitas Junior, J. A. Moore, W. J. Silva, A. Ferreira da Pepe, Iuri Muniz Almeida, J. Souza de Osório-Guillén, J. M. Ahuja, Rajeev Persson, C. Järrendahl, K. Lindquist, O. P. A. Edwards, N. V. Wahab, Q. |
metadata.dc.creator: | Oliveira, A. C. de Freitas Junior, J. A. Moore, W. J. Silva, A. Ferreira da Pepe, Iuri Muniz Almeida, J. Souza de Osório-Guillén, J. M. Ahuja, Rajeev Persson, C. Järrendahl, K. Lindquist, O. P. A. Edwards, N. V. Wahab, Q. |
Resumen : | Calculations of the total dielectric functions and the optical bandgap energy (OBGE) of 4HSiC were performed by the full-potential linear muffin-tin-orbital method. The results are compared to spectroscopic ellipsometry dielectric measurements agreeing closely over in a wide range of energies. The obtained theoretical value of the (OBGE) agrees very closely with the measured ones obtained by transmission and photoacoustic spectroscopies at room temperature performed on 470 µm thick wafer and a 25 µm thick homoepitaxial layer of 4H-SiC samples grown (n-type, Siface) by hot wall CVD. |
Palabras clave : | Optical bandgap energy wide-bandgap material SiC polytypes Computer simulation |
URI : | http://www.repositorio.ufba.br/ri/handle/ri/4917 |
Fecha de publicación : | 2003 |
Aparece en las colecciones: | Artigo Publicado em Periódico (FIS) |
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Fichero | Descripción | Tamaño | Formato | |
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v6n1a08.pdf | 73,18 kB | Adobe PDF | Visualizar/Abrir |
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