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metadata.dc.type: | Artigo de Periódico |
Título : | Spin-orbit interaction strength and anisotropy in III-V semiconductor heterojunctions |
Otros títulos : | Physical Review B |
Autor : | Sandoval, M. A. Toloza Silva, A. Ferreira da Silva, E. A. de Andrada e Rocca, G. C. La |
metadata.dc.creator: | Sandoval, M. A. Toloza Silva, A. Ferreira da Silva, E. A. de Andrada e Rocca, G. C. La |
Resumen : | The spin-orbit interaction strength for electrons in III-V semiconductor heterojunctions and the corresponding in-plane anisotropy are theoretically studied, considering Rashba and Dresselhaus contributions. Starting from a variational solution of Kane's effective Hamiltonian for the Rashba-split subbands, the total spin-orbit splitting at the Fermi level of the two-dimensional electron gas in III-V heterojunctions is calculated analytically, as a function of the electron density and wave-vector direction, by adding the Dresselhaus contribution within quasidegenerate first-order perturbation theory. Available GaAs and InGaAs experimental data are discussed. Effects of the barrier penetration are identified, and the spin-orbit anisotropy is shown to be determined by more than one parameter, even in the small-k limit, contrary to the commonly used α/β (where α is the Rashba and β the Dresselhaus interaction) single-parameter picture. |
metadata.dc.publisher.country: | Brasil |
metadata.dc.rights: | Acesso Aberto |
URI : | http://repositorio.ufba.br/ri/handle/ri/17070 |
Fecha de publicación : | 2013 |
Aparece en las colecciones: | Artigo Publicado em Periódico (FIS) |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
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M. A. Toloza Sandoval.pdf | 423,27 kB | Adobe PDF | Visualizar/Abrir |
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