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https://repositorio.ufba.br/handle/ri/13964
metadata.dc.type: | Artigo de Periódico |
Título : | Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions |
Otros títulos : | Scientific Reports |
Autor : | Fontana, Marcio Deppe, Tristan Boyd, Anthony K. Rinzan, Mohamed Liu, Amy Y. Paranjape, Makarand Barbara, Paola |
metadata.dc.creator: | Fontana, Marcio Deppe, Tristan Boyd, Anthony K. Rinzan, Mohamed Liu, Amy Y. Paranjape, Makarand Barbara, Paola |
Resumen : | Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence band. Although n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was recently demonstrated, transport in the valence band has been elusive for solid-state devices. Here we show that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2 p-type transistors. When two different materials are used for the source and drain contacts, for example hole-doping Pd and electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect. |
metadata.dc.publisher.country: | Brasil |
Editorial : | Scientific Reports |
metadata.dc.rights: | Acesso Aberto |
URI : | http://repositorio.ufba.br/ri/handle/ri/13964 |
Fecha de publicación : | 2013 |
Aparece en las colecciones: | Artigo Publicado em Periódico (PPGEE) |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
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222222r.pdf | 780,79 kB | Adobe PDF | Visualizar/Abrir |
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