Campo DC | Valor | Idioma |
dc.contributor.author | Fontana, Marcio | - |
dc.contributor.author | Deppe, Tristan | - |
dc.contributor.author | Boyd, Anthony K. | - |
dc.contributor.author | Rinzan, Mohamed | - |
dc.contributor.author | Liu, Amy Y. | - |
dc.contributor.author | Paranjape, Makarand | - |
dc.contributor.author | Barbara, Paola | - |
dc.creator | Fontana, Marcio | - |
dc.creator | Deppe, Tristan | - |
dc.creator | Boyd, Anthony K. | - |
dc.creator | Rinzan, Mohamed | - |
dc.creator | Liu, Amy Y. | - |
dc.creator | Paranjape, Makarand | - |
dc.creator | Barbara, Paola | - |
dc.date.accessioned | 2013-11-27T12:53:20Z | - |
dc.date.available | 2013-11-27T12:53:20Z | - |
dc.date.issued | 2013 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | http://repositorio.ufba.br/ri/handle/ri/13964 | - |
dc.description | p. 1-5 | pt_BR |
dc.description.abstract | Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale
optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic
devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar
transistors to investigate charge transport both in the conduction band and in the valence band. Although
n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was
recently demonstrated, transport in the valence band has been elusive for solid-state devices. Here we show
that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2 p-type transistors.
When two different materials are used for the source and drain contacts, for example hole-doping Pd and
electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect. | pt_BR |
dc.language.iso | en | pt_BR |
dc.publisher | Scientific Reports | pt_BR |
dc.rights | Acesso Aberto | pt_BR |
dc.source | http://www.nature.com/srep/2013/130409/srep01634/pdf/srep01634.pdf | pt_BR |
dc.title | Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions | pt_BR |
dc.title.alternative | Scientific Reports | pt_BR |
dc.type | Artigo de Periódico | pt_BR |
dc.description.localpub | Salvador | pt_BR |
dc.identifier.number | v. 3, n. 1634 | pt_BR |
dc.publisher.country | Brasil | pt_BR |
Aparece nas coleções: | Artigo Publicado em Periódico (PPGEE)
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