Enhanced spin susceptibility in phosphorus-doped silicon

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metadata.dc.type:	Artigo de Periódico
Título :	Enhanced spin susceptibility in phosphorus-doped silicon
Otros títulos :	Physical Review B
Autor :	Silva, A. Ferreira da
metadata.dc.creator:	Silva, A. Ferreira da
Resumen :	The influence of the many-valley isotropic effect of the conduction band with a variational Xz dependence on the metal-nonmetal transition of doped semiconductors is investigated further in the calculation of spin susceptibility. A previously developed Gutzwiller method for finite temperature is used. Good agreement with experimental findings is found.
Editorial :	Physical Review B
URI :	http://repositorio.ufba.br/ri/handle/ri/13517
Fecha de publicación :	1988
Aparece en las colecciones:	Artigo Publicado em Periódico (FIS)

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