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Please use this identifier to cite or link to this item: http://repositorio.ufba.br/ri/handle/ri/8496

Title: Impurity states in the narrow band-gap semiconductor n-type InSb
Other Titles: Solid State Communications
Authors: Silva, A. Ferreira da
Dantas, Nilton Souza
Mota, F. de Brito
Canuto, Sylvio
Fazzio, A.
Keywords: A. disordered systems;A. semiconductors;C. impurities in semiconductors;D. optical properties
Issue Date: 1996
Abstract: We investigate impurity pair and triad formations in the narrow band-gap semiconductor n-doped InSb. It is found that in the region of the band-gap energy, Eg = 0.23 eV, at 0 K, the effects of such clusters play a relevant role in the optical properties around and below the ionization energy of an isolated impurity (i.e., Ei = 0.64 meV). The transition for the uncompensated system is obtained as the concentration of impurities exceeds Nc = 4.7 × 1013 cm−3.
Description: Texto completo: acesso restrito. p.295–297
URI: http://www.repositorio.ufba.br/ri/handle/ri/8496
ISSN: 0038-1098
Appears in Collections:Artigos Publicados em Periódicos (FIS)

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