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metadata.dc.type: | Artigo de Periódico |
Title: | Effective electronic masses in wurtzite and zinc-blende GaN and AlN |
Other Titles: | Journal of Crystal Growth |
Authors: | Persson, C. Silva, A. Ferreira da Ahuja, Rajeev Johansson, B. |
metadata.dc.creator: | Persson, C. Silva, A. Ferreira da Ahuja, Rajeev Johansson, B. |
Abstract: | The effective electron and hole masses are fundamental quantities of semiconductors, used in numerous analyses of experiments and theoretical investigations. We present calculations of the band structure near the band edges in intrinsic GaN and AlN, both for the wurtzite and the zinc-blende polytypes. We have utilized a full-potential linearized augmented plane wave method within the density functional theory and with two different exchange-correlation potentials. The lattice parameters have been determined by a minimization of the total energy, whereupon the crystal-field splitting, the spin–orbit splitting, and the effective electron and hole masses have been calculated. The calculated effective masses are in good agreement with available experimental values. We show the importance of performing a fully relativistic calculation. For instance, the hole mass in cubic AlN is a very large and negative quantity if the spin–orbit coupling is excluded, whereas the fully relativistic calculation gives a relatively small and positive value. |
Keywords: | A1. Computer simulation A1. Crystal structure B1. Nitrides B2. Semiconducting III–V materials |
URI: | http://www.repositorio.ufba.br/ri/handle/ri/7669 |
Issue Date: | 2001 |
Appears in Collections: | Artigo Publicado em Periódico (FIS) |
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