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https://repositorio.ufba.br/handle/ri/5546
metadata.dc.type: | Artigo de Periódico |
Título : | Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve |
Otros títulos : | SOLID-STATE ELECTRONICS |
Autor : | Cunha, Ana Isabela Araújo Pavanello, Marcelo Antonio Trevisoli, Renan Doria Galup-Montoro, Carlos Schneider, Marcio Cherem |
metadata.dc.creator: | Cunha, Ana Isabela Araújo Pavanello, Marcelo Antonio Trevisoli, Renan Doria Galup-Montoro, Carlos Schneider, Marcio Cherem |
Resumen : | In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point of the gm/ID (transconductance-to-current ratio) curve in the linear region corresponds exactly to the condition IDdrift = IDdiff when mobility variation is neglected. Numerical simulations show that the threshold voltages determined from the gm/ID curve and from the IDdrift = IDdiff condition differ by about /t/2 (one half of the thermal voltage) when considering realistic mobility variations. Simulation results show that the threshold voltages determined with the gm/ID procedure are close to those obtained with the Y (=ID= ffiffiffiffiffiffi gm p ) function method for a considerable range of silicon film thicknesses, channel lengths, and temperature values. The current-based procedure has also been successfully applied experimentally to a FinFET over a wide temperature range. |
Palabras clave : | DG-MOSFET Parameter extraction Threshold voltage |
URI : | http://www.repositorio.ufba.br/ri/handle/ri/5546 |
Fecha de publicación : | 2011 |
Aparece en las colecciones: | Artigo Publicado em Periódico (PPGEE) |
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