Please use this identifier to cite or link to this item:
https://repositorio.ufba.br/handle/ri/16549
metadata.dc.type: | Artigo de Periódico |
Title: | Optical properties of donor-triad cluster in GaAs and GaN |
Other Titles: | Applied Physics Letters |
Authors: | Almeida, J. Souza de Silva, A. J. da Norman, P. Persson, C. Ahuja, Rajeev Silva, A. Ferreira da |
metadata.dc.creator: | Almeida, J. Souza de Silva, A. J. da Norman, P. Persson, C. Ahuja, Rajeev Silva, A. Ferreira da |
Abstract: | The effect of the transition energy of three-donor clusters on far infrared absorption in n-type semiconductor materials has been investigated by a multiconfigurational self-consistent-field model calculation and applied to GaAs and GaN systems. We show that it is crucial to consider the many-particle correlation effects within three-donor clusters. With electron correlation taken into account, the present results support the interpretation of a very recent unidentified peak energy observed in absorption measurement of GaN as due to electronic transitions in these clusters. We also corroborate the suggestion that the X line in GaAs arises from such transitions. |
metadata.dc.publisher.country: | Brasil |
metadata.dc.rights: | Acesso Aberto |
URI: | http://repositorio.ufba.br/ri/handle/ri/16549 |
Issue Date: | 2002 |
Appears in Collections: | Artigo Publicado em Periódico (FIS) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
J. Souza de Almeida.pdf | 254,08 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.