Please use this identifier to cite or link to this item:
https://repositorio.ufba.br/handle/ri/13521
metadata.dc.type: | Artigo de Periódico |
Title: | Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC. |
Authors: | Silva, Antonio Ferreira da Pernot, Julien Contreras, Sylvie Sernelius, Bo E. Persson, Clas Camassel, Jean |
metadata.dc.creator: | Silva, Antonio Ferreira da Pernot, Julien Contreras, Sylvie Sernelius, Bo E. Persson, Clas Camassel, Jean |
Abstract: | The electrical resistivity of 4H-SiC doped with nitrogen is analyzed in the temperature range 10–700 K for nitrogen concentrations between 3.5×1015 and 5×1019 cm−3. For the highest doped samples, a good agreement is found between the experimental resistivity and the values calculated from a generalized Drude approach at similar dopant concentration and temperature. From these results, the critical concentration (Nc) of nitrogen impurities which corresponds to the metal-nonmetal transition in 4H-SiC is deduced. We find Nc∼1019 cm−3. |
Publisher: | Physical Review B |
URI: | http://repositorio.ufba.br/ri/handle/ri/13521 |
Issue Date: | 2006 |
Appears in Collections: | Artigo Publicado em Periódico (FIS) |
Files in This Item:
File | Description | Size | Format | |
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e245201.pdf | 98,61 kB | Adobe PDF | View/Open |
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