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https://repositorio.ufba.br/handle/ri/13249
metadata.dc.type: | Artigo de Periódico |
Título : | Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi |
Otros títulos : | Physical Review B |
Autor : | Araújo, Carlos Moysés Almeida, J. Souza de Pepe, Iuri Muniz Silva, A. Ferreira da Sernelius, Bo E. Souza, Joel Pereira de Boudinov, Henri Ivanov |
metadata.dc.creator: | Araújo, Carlos Moysés Almeida, J. Souza de Pepe, Iuri Muniz Silva, A. Ferreira da Sernelius, Bo E. Souza, Joel Pereira de Boudinov, Henri Ivanov |
Resumen : | The band-gap shift of the heavily single and double-donor doped systems Si:Bi and Si:P,Bi, prepared by ion implantation, was investigated theoretically and experimentally at room temperature. The calculations were carried out within a framework of the random-phase approximation and the temperature and different manybody effects were taken into account. The experimental data were obtained with photoconductivity measurements. Theoretical and experimental results fall closely together in a wide range of donor concentration. |
Editorial : | Physical Review B |
URI : | http://www.repositorio.ufba.br/ri/handle/ri/13249 |
Fecha de publicación : | 2000 |
Aparece en las colecciones: | Artigo Publicado em Periódico (FIS) |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
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444444444444.pdf | 67,96 kB | Adobe PDF | Visualizar/Abrir |
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