Please use this identifier to cite or link to this item:
https://repositorio.ufba.br/handle/ri/8096
metadata.dc.type: | Artigo de Periódico |
Title: | Optical characterization and metal–nonmetal transition of boron-doped Si1−xGex alloy |
Other Titles: | Solid-State Electronics |
Authors: | Silva, A. Ferreira da An, C. Ying Souza, J. Caetano de Alves, A. Santos Silva, T. Souza da Dantas, Nilton Souza Almeida, J. Souza de Silva, A.V. Batista da Pepe, Iuri Muniz |
metadata.dc.creator: | Silva, A. Ferreira da An, C. Ying Souza, J. Caetano de Alves, A. Santos Silva, T. Souza da Dantas, Nilton Souza Almeida, J. Souza de Silva, A.V. Batista da Pepe, Iuri Muniz |
Abstract: | We report measurements of the optical band gap of Si1−xGex, by photoacoustic spectroscopy technique. The material has been obtained by a mechanical alloying process. Due to its technological application, in high-performance bipolar transistors and integrated circuits, the interest in the physical properties of Si1−xGex has recently increased. The metal–nonmetal transition (for x=0.2) is determined to be 3.2×1018 cm−3. The optical band gap estimated from the absorption data at high boron concentration shows band gap narrowing when compared to the undoped alloy. |
URI: | http://www.repositorio.ufba.br/ri/handle/ri/8096 |
Issue Date: | 1999 |
Appears in Collections: | Artigo Publicado em Periódico (FIS) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Silva.pdf Restricted Access | 165,16 kB | Adobe PDF | View/Open Request a copy |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.