| Campo DC | Valor | Idioma |
|---|
| dc.contributor.author | Perondi, L.F. | - |
| dc.contributor.author | Fabbri, M. | - |
| dc.contributor.author | Silva, A.Ferreira da | - |
| dc.creator | Perondi, L.F. | - |
| dc.creator | Fabbri, M. | - |
| dc.creator | Silva, A.Ferreira da | - |
| dc.date.accessioned | 2013-01-15T18:30:38Z | - |
| dc.date.available | 2013-01-15T18:30:38Z | - |
| dc.date.issued | 1990 | - |
| dc.identifier.issn | 0038-1098 | - |
| dc.identifier.uri | http://www.repositorio.ufba.br/ri/handle/ri/7870 | - |
| dc.description | Texto completo. Acesso restrito. p. 1 - 5 | pt_BR |
| dc.description.abstract | We report a calculation of the electronic specific heat near 0 K for the Si:P system, taking into account the characteristic valley-splitting of the impurity levels near the conduction band minima. This effect is shown to describe properly the deviations from the free-electron model around the metal-to-nonmetal transition. This is a strong argument towards the picture of an Anderson-type (disorder-dominated) transition in indirect gap semiconductors. Our results account very well for the experimental findings. | pt_BR |
| dc.language.iso | en | pt_BR |
| dc.publisher | Solid State Communications | pt_BR |
| dc.source | http://dx.doi.org/10.1016/0038-1098(90)90741-S | pt_BR |
| dc.title | Influence of valley-splitting in the specific heat of Si:P | pt_BR |
| dc.title.alternative | Solid State Communications | pt_BR |
| dc.type | Artigo de Periódico | pt_BR |
| dc.description.localpub | Salvador | pt_BR |
| dc.identifier.number | v. 73, n. 4 | pt_BR |
| Aparece nas coleções: | Artigo Publicado em Periódico (FIS)
|
