Por favor, use este identificador para citar o enlazar este ítem:
https://repositorio.ufba.br/handle/ri/7533
metadata.dc.type: | Artigo de Periódico |
Título : | Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si |
Otros títulos : | Microelectronics Journal |
Autor : | Araújo, Carlos Moysés Fernandez, J. R. L. Silva, A. Ferreira da Pepe, Iuri Muniz Leite, J. R. Sernelius, Bo E. Persson, C. As, D. J. |
metadata.dc.creator: | Araújo, Carlos Moysés Fernandez, J. R. L. Silva, A. Ferreira da Pepe, Iuri Muniz Leite, J. R. Sernelius, Bo E. Persson, C. As, D. J. |
Resumen : | The electrical resistivity of the Si-donor cubic GaN is investigated theoretically at low temperature. The critical impurity concentration, Nc, for the metal–nonmetal transition is estimated in three different ways: from using the generalized Drude approach (GDA) for the resistivity; from the vanishing of the chemical potential calculated using the dielectric function model with a Lorentz-Lorenz correction; from finding the crossing point between the energy in the insulating and metallic states. The bandgap narrowing (BGN) has been determined theoretically and experimentally above the MNM transition. The experimental data have been obtained with photoluminescence measurements. Theoretical and experimental results are in rough agreement in the range of impurity concentration of interest. |
Palabras clave : | Resistivity Metal–nonmetal transition Band-gap shift Photoluminescence |
URI : | http://www.repositorio.ufba.br/ri/handle/ri/7533 |
Fecha de publicación : | abr-2002 |
Aparece en las colecciones: | Artigo Publicado em Periódico (FIS) |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
1-s2.0-S0026269201001331-main.pdf Restricted Access | 152,21 kB | Adobe PDF | Visualizar/Abrir Request a copy |
Los ítems de DSpace están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.