Please use this identifier to cite or link to this item: https://repositorio.ufba.br/handle/ri/7045
metadata.dc.type: Artigo de Periódico
Artigo de Periódico
Title: Modeling and performance of vanadium–oxide transition edge microbolometers
Other Titles: Applied Physics Letters
Authors: Almeida, Luiz Alberto Luz de
Lima, A. M. N.
Khrebtov, Igor A.
Malyarov, V. G.
Neff, Helmut Franz
metadata.dc.creator: Almeida, Luiz Alberto Luz de
Lima, A. M. N.
Khrebtov, Igor A.
Malyarov, V. G.
Neff, Helmut Franz
Abstract: The performance of a VO2 thin-film microbolometer has been investigated. The device is operated within 35 °C<T<60 °C, in the hysteretic metal-insulator transition region. An algebraic hysteresis model has been used to model the resistance-temperature characteristic of the sensor. It accurately describes the resistance versus temperature characteristics of the material. Employing this model, and in conjunction with established bolometer theory, the responsivity of a VO2 film is calculated and compared with experimental data. Superior performance of the device is achievable under conditions of single pulse incident radiation where the operating point remains on the major hysteresis loop. This results in a pronounced responsivity peak within the center of the metal-insulator transition. Continuous periodic excitation, in contrast, leads to a steadily decreasing and much lower sensitivity at higher temperature, due to the formation of minor hysteresis loops and the loop accommodation process.
URI: http://www.repositorio.ufba.br/ri/handle/ri/7045
Issue Date: 2004
Appears in Collections:Artigo Publicado em Periódico (PEI)

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