Photoacoustic and transmission studies of SiC polytypes

Abstract

The optical bandgap energies (OBGE) of 3C, 15R, 6H and 4H-SiC have been investigate experimentally by transmission and photoacoustic spectroscopies. The measurements were performed on 470 mm thick wafers. The OBGE obtained from both spectroscopies for different polytypes show very good agreement. In order to have a better understanding of these materials calculations of eletronic band structure were performed by the full-potential linearized augmented plane wave (FPLAPW) method. For the OBGE the results are compared to the measurements agreeing closely over the energies of those polytypes.