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https://repositorio.ufba.br/handle/ri/16272
metadata.dc.type: | Artigo de Periódico |
Título : | Impurity cluster effects in high- and low-doping semiconductor materials |
Otros títulos : | International Journal of Quantum Chemistry |
Autor : | Silva, A. Ferreira Da |
metadata.dc.creator: | Silva, A. Ferreira Da |
Resumen : | The cluster-like impurity effect in semiconductor materials as Si, GaN, GaAs, and 4H[BOND]SiC for impurity concentrations spanning the metallic to the insulating regimes, i.e., from high- to low-doping concentration, has been investigated at low temperature. To metallic regime a critical impurity concentration for metal–nonmetal transition is estimated from a highly correlated system by a doubly doped Hmath image-like different impurity pairs. For insulating regime, the absorption measurements reveal low-energy absorption peaks identified as electronic transitions in three-donor clusters. The many-particle correlation via a multi-configurational self-consistent field model is used in the calculation. |
Palabras clave : | Molecule Donor pairs Donor triads Semiconductors Absorption |
metadata.dc.rights: | Acesso Aberto |
URI : | http://repositorio.ufba.br/ri/handle/ri/16272 |
Fecha de publicación : | 2011 |
Aparece en las colecciones: | Artigo Publicado em Periódico (FIS) |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
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A. Ferreira Da Silva.pdf | 372,76 kB | Adobe PDF | Visualizar/Abrir |
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