Please use this identifier to cite or link to this item:
https://repositorio.ufba.br/handle/ri/14539
metadata.dc.type: | Artigo de Periódico |
Title: | Influence of Si doping on optical properties of wurtzite GaN |
Other Titles: | Journal of Physics: Condensed Matter |
Authors: | Silva, A. Ferreira da Araújo, Carlos Moysés Sernelius, Bo E. Persson, C. Ahuja, Rajeev Johansson, B |
metadata.dc.creator: | Silva, A. Ferreira da Araújo, Carlos Moysés Sernelius, Bo E. Persson, C. Ahuja, Rajeev Johansson, B |
Abstract: | The band gap shift (BGS) of Si-doped wurtzite GaN for impurity concentrations spanning the insulating to the metallic regimes has been investigated at low temperature. The critical impurity concentration for the metal-non-metal transition is estimated from the generalized Drude approach for the resistivity to be about 1.0×1018 cm-3. The calculations for the BGS were carried out within a framework of the random phase approximation, taking into account the electron-electron, electron-optical phonon, and electron-ion interactions. In the wake of very recent photoluminescence measurements, we have shown and discussed the possible transitions involved in the experimental results. |
Keywords: | band gap shift concentrations spanning |
metadata.dc.rights: | Acesso Aberto |
URI: | http://repositorio.ufba.br/ri/handle/ri/14539 |
Issue Date: | 2001 |
Appears in Collections: | Artigo Publicado em Periódico (FIS) |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.