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Use este identificador para citar ou linkar para este item: https://repositorio.ufba.br/handle/ri/13964
Tipo: Artigo de Periódico
Título: Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
Título(s) alternativo(s): Scientific Reports
Autor(es): Fontana, Marcio
Deppe, Tristan
Boyd, Anthony K.
Rinzan, Mohamed
Liu, Amy Y.
Paranjape, Makarand
Barbara, Paola
Autor(es): Fontana, Marcio
Deppe, Tristan
Boyd, Anthony K.
Rinzan, Mohamed
Liu, Amy Y.
Paranjape, Makarand
Barbara, Paola
Abstract: Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence band. Although n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was recently demonstrated, transport in the valence band has been elusive for solid-state devices. Here we show that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2 p-type transistors. When two different materials are used for the source and drain contacts, for example hole-doping Pd and electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect.
País: Brasil
Editora / Evento / Instituição: Scientific Reports
Tipo de Acesso: Acesso Aberto
URI: http://repositorio.ufba.br/ri/handle/ri/13964
Data do documento: 2013
Aparece nas coleções:Artigo Publicado em Periódico (PPGEE)

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