Please use this identifier to cite or link to this item:
https://repositorio.ufba.br/handle/ri/13786
metadata.dc.type: | Artigo de Periódico |
Title: | CMOS multiplier based on the relationship between drain current and inversion charge |
Other Titles: | IET Circuits, Devices and Systems |
Authors: | Machado, M. B. Cunha, A. I. A. Lacerda, L. A. de Galup Montoro, C. Schneider, Marcio Cherem |
metadata.dc.creator: | Machado, M. B. Cunha, A. I. A. Lacerda, L. A. de Galup Montoro, C. Schneider, Marcio Cherem |
Abstract: | The authors propose a four-quadrant multiplier based on a core cell that exploits the general relationship between the saturation current of an MOS transistor and the source inversion charge density, valid from weak to strong inversion. The advantages of the proposed circuit are simplicity, low distortion and feasibility of low-voltage operation. Experimental results in a 0.35 mum CMOS prototype indicate 1 mA consumption for 1 MHz bandwidth, and distortion level below 1 for an input current of 80 of the full-scale range. The multiplier core area is around 10 000 m2. |
metadata.dc.rights: | Acesso Aberto |
URI: | http://repositorio.ufba.br/ri/handle/ri/13786 |
Issue Date: | 2009 |
Appears in Collections: | Artigo Publicado em Periódico (PPGEE) |
Files in This Item:
File | Description | Size | Format | |
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05285987.pdf | 593,15 kB | Adobe PDF | View/Open |
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