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https://repositorio.ufba.br/handle/ri/13173| metadata.dc.type: | Artigo de Periódico |
| Title: | Impurity conductivities in compensated semiconductor systems |
| Other Titles: | Physical Review B |
| Authors: | Silva, A. Ferreira da |
| metadata.dc.creator: | Silva, A. Ferreira da |
| Abstract: | In light of recent measurements of the transport properties in compensated semiconductor systems, we report a calculation for the low-temperature dc electrical conductivity of the systems Si:P and Ge:Sb as a function of concentration and compensation. The effects of disorder are taken into account in the calculation. With increasing compensation the conductivity follows the trend of the experimental results. For uncompensated systems the results agree fairly well with experiments. |
| Publisher: | Physical Review B |
| URI: | http://www.repositorio.ufba.br/ri/handle/ri/13173 |
| Issue Date: | 1993 |
| Appears in Collections: | Artigo Publicado em Periódico (FIS) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 888888888888888.pdf | 128,15 kB | Adobe PDF | View/Open |
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