|
|
RI UFBA >
Browsing by Author Ahuja, Rajeev
Showing results 1 to 20 of 23
| Issue Date | Title | Author(s) | | 2012 | Band gap engineering by anion doping in the photocatalyst BiTaO4: First principle calculations | Nisar, Jawad; Wang, Baochang; Araújo, Carlos Moysés; Silva, Antonio Ferreira da; Kang, Tae Won; Ahuja, Rajeev |
| 2001 | Effective electron and hole masses in intrinsic and heavily n-type doped GaN and AlN | Silva, A. Ferreira da; Persson, C.; Ahuja, Rajeev; Johansson, B. |
| 2001 | Effective electronic masses in wurtzite and zinc-blende GaN and AlN | Persson, C.; Silva, A. Ferreira da; Ahuja, Rajeev; Johansson, B. |
| 2004 | Electrical resistivity of acceptor carbon in GaAs | Silva, A. Ferreira da; Sernelius, I.; Persson, C.; Ahuja, Rajeev; Pepe, Bo E. |
| Dec-2002 | Electronic and optical properties of lead iodide | Ahuja, Rajeev; Arwin, Hans; Silva, A. Ferreira da; Araújo, Carlos Moysés; Veje, E.; Pepe, Iuri Muniz; Johansson, B. |
| 2001 | First-principle calculations of optical properties of wurtzite AlN and GaN | Persson, C.; Ahuja, Rajeev; Silva, A. Ferreira da; Johansson, B. |
| 2001 | First-principle calculations of the dielectric function of zinc-blende and wurtzite InN | Ahuja, Rajeev; Persson, C.; Silva, A. Ferreira da; Johansson, B. |
| 2013 | First-principles investigation of Li ion diffusion in Li2FeSiO4 | Araujo, Rafael B.; Scheicher, Ralph H.; Almeida, J. Souza de; Silva, A. Ferreira da; Ahuja, Rajeev |
| 2001 | Influence of Si doping on optical properties of wurtzite GaN | Silva, A. Ferreira da; Araújo, Carlos Moysés; Sernelius, Bo E.; Persson, C.; Ahuja, Rajeev; Johansson, B |
| 2013 | Lithium transport investigation in LixFeSiO4: a promising cathode material | Araujo, Rafael B.; Scheicher, Ralph H.; Almeida, J. Souza de; Silva, A. Ferreira da; Ahuja, Rajeev |
| 2008 | Novel semiconducting materials for optoelectronic applications: Al1−xTlxN alloys | Dantas, Nilton Souza; Almeida, J. Souza de; Ahuja, Rajeev; Persson, C.; Silva, A. Ferreira da |
| 2009 | On the dynamical stability and metallic behavior of YH3 under pressure | Almeida, J. Souza de; Kim, D. Y.; Ortiz, C.; Klintenberg, M.; Ahuja, Rajeev |
| Sep-2002 | Optical and reduced band gap in n- and p-type GaN and AlN | Persson, C.; Sernelius, Bo E.; Silva, A. Ferreira da; Araújo, Carlos Moysés; Ahuja, Rajeev; Johansson, B. |
| 2006 | Optical band-edge absorption of oxide compound SnO2 | Roman, L. S.; Valaski, R.; Canestraro, Carla Daniele; Magalhães, E. C. S.; Persson, C.; Ahuja, Rajeev; Silva Junior, E. F. da; Pepe, Iuri Muniz; Silva, A. Ferreira da |
| 15-Feb-2002 | Optical properties of 4H–SiC | Ahuja, Rajeev; Silva, A. Ferreira da; Persson, C.; Osorio Guillén, J. M.; Pepe, Iuri Muniz; Järrendahl, K.; Lindquist, O. P. A. |
| 2002 | Optical properties of donor-triad cluster in GaAs and GaN | Almeida, J. Souza de; Silva, A. J. da; Norman, P.; Persson, C.; Ahuja, Rajeev; Silva, A. Ferreira da |
| 2006 | Optical properties of in situ doped and undoped titania nanocatalysts and doped titania sol–gel nanofilms | Silva, A. Ferreira da; Pepe, Iuri Muniz; Gole, James L.; Tomás, S. A.; Palomino, R.; Azevedo, W. M. de; Silva Junior, E. F. da; Ahuja, Rajeev; Persson, C. |
| 2003 | Optical properties of SiGe alloys | Silva, A. Ferreira da; Ahuja, Rajeev; Persson, C.; Almeida, J. Souza de; Araújo, Carlos Moysés; Johansson, B. |
| 2003 | Photoacoustic and transmission studies of SiC polytypes | Oliveira, A. C. de; Freitas Junior, J. A.; Moore, W. J.; Silva, A. Ferreira da; Pepe, Iuri Muniz; Almeida, J. Souza de; Braga, G. C. B.; Osório-Guillen, J. M.; Persson, C.; Ahuja, Rajeev |
| 2003 | Spectroscopy studies of 4H-SiC | Oliveira, A. C. de; Freitas Junior, J. A.; Moore, W. J.; Silva, A. Ferreira da; Pepe, Iuri Muniz; Almeida, J. Souza de; Osório-Guillén, J. M.; Ahuja, Rajeev; Persson, C.; Järrendahl, K.; Lindquist, O. P. A.; Edwards, N. V.; Wahab, Q. |
Showing results 1 to 20 of 23
|
