Effect of three-donor cluster on infrared absorption of semiconductor systems

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Campo DC	Valor	Idioma
dc.contributor.author	Silva, A Ferreira da	-
dc.contributor.author	Canuto, Sylvio	-
dc.creator	Silva, A Ferreira da	-
dc.creator	Canuto, Sylvio	-
dc.date.accessioned	2013-01-14T18:23:04Z	-
dc.date.available	2013-01-14T18:23:04Z	-
dc.date.issued	1990	-
dc.identifier.issn	0038-1098	-
dc.identifier.uri	http://www.repositorio.ufba.br/ri/handle/ri/7851	-
dc.description	p. 1 - 3	pt_BR
dc.description.abstract	The density of states in n-doped Si in the intermediate impurity concentration range has been calculated for an interacting three-donor molecule. The results support the interpretation that the observed far infrared absorption at the energies below 30 meV is due to the electronic transition H? -+ H: from their impurity ground states.	pt_BR
dc.language.iso	en	pt_BR
dc.publisher	Solid State Communications	pt_BR
dc.source	http://dx.doi.org/10.1016/0038-1098(90)90414-7	pt_BR
dc.title	Effect of three-donor cluster on infrared absorption of semiconductor systems	pt_BR
dc.title.alternative	Solid State Communications	pt_BR
dc.type	Artigo de Periódico	pt_BR
dc.description.localpub	São José dos Campos	pt_BR
dc.identifier.number	v. 75, n. 11	pt_BR
Aparece nas coleções:	Artigo Publicado em Periódico (FIS)

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