| Campo DC | Valor | Idioma |
|---|
| dc.contributor.author | Silva, A. Ferreira da | - |
| dc.contributor.author | Sernelius, I. | - |
| dc.contributor.author | Persson, C. | - |
| dc.contributor.author | Ahuja, Rajeev | - |
| dc.contributor.author | Pepe, Bo E. | - |
| dc.creator | Silva, A. Ferreira da | - |
| dc.creator | Sernelius, I. | - |
| dc.creator | Persson, C. | - |
| dc.creator | Ahuja, Rajeev | - |
| dc.creator | Pepe, Bo E. | - |
| dc.date.accessioned | 2013-01-04T13:52:20Z | - |
| dc.date.available | 2013-01-04T13:52:20Z | - |
| dc.date.issued | 2004 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | http://www.repositorio.ufba.br/ri/handle/ri/7753 | - |
| dc.description | p. 2532-2535 | pt_BR |
| dc.description.abstract | The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017
and 1019 cm23. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach at similar temperatures and doping concentrations. The
critical impurity concentration for the metal–nonmetal transition was found to be about 1018 cm23. | pt_BR |
| dc.language.iso | en | pt_BR |
| dc.source | http://dx.doi.org/10.1063/1.1645971 | pt_BR |
| dc.title | Electrical resistivity of acceptor carbon in GaAs | pt_BR |
| dc.title.alternative | Journal of Applied Physics | pt_BR |
| dc.type | Artigo de Periódico | pt_BR |
| dc.identifier.number | v. 95, n. 5 | pt_BR |
| Aparece nas coleções: | Artigo Publicado em Periódico (FIS)
|
