Campo DC | Valor | Idioma |
dc.contributor.author | Silva, A. Ferreira da | - |
dc.contributor.author | Ahuja, Rajeev | - |
dc.contributor.author | Persson, C. | - |
dc.contributor.author | Almeida, J. Souza de | - |
dc.contributor.author | Araújo, Carlos Moysés | - |
dc.contributor.author | Johansson, B. | - |
dc.creator | Silva, A. Ferreira da | - |
dc.creator | Ahuja, Rajeev | - |
dc.creator | Persson, C. | - |
dc.creator | Almeida, J. Souza de | - |
dc.creator | Araújo, Carlos Moysés | - |
dc.creator | Johansson, B. | - |
dc.date.accessioned | 2014-02-21T18:32:10Z | - |
dc.date.available | 2014-02-21T18:32:10Z | - |
dc.date.issued | 2003 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://repositorio.ufba.br/ri/handle/ri/14655 | - |
dc.description | p. 3832-3836 | pt_BR |
dc.description.abstract | The optical properties of Si1−xGex have been investigated theoretically using a full-potential linear muffin-tin-orbital method. We present the density-of-states as well as the real and imaginary parts of the dielectric function. The calculated dielectric function was found to be in good agreement with the spectroscopic ellipsometry measurements by J. Bahng et al., J. Phys.: Condens. Matter 13, 777 (2001), and we obtained a static dielectric constant of ε0=12.19+2.45x in the Si rich regime (x⩽0.5). | pt_BR |
dc.language.iso | en | pt_BR |
dc.rights | Acesso Aberto | pt_BR |
dc.source | http://dx.doi.org.ez10.periodicos.capes.gov.br/10.1063/1.1555702 | pt_BR |
dc.title | Optical properties of SiGe alloys | pt_BR |
dc.title.alternative | Journal of Applied Physics | pt_BR |
dc.type | Artigo de Periódico | pt_BR |
dc.identifier.number | v. 93, n. 7 | pt_BR |
dc.publisher.country | Brasil | pt_BR |
Aparece nas coleções: | Artigo Publicado em Periódico (FIS)
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