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https://repositorio.ufba.br/handle/ri/17070
metadata.dc.type: | Artigo de Periódico |
Title: | Spin-orbit interaction strength and anisotropy in III-V semiconductor heterojunctions |
Other Titles: | Physical Review B |
Authors: | Sandoval, M. A. Toloza Silva, A. Ferreira da Silva, E. A. de Andrada e Rocca, G. C. La |
metadata.dc.creator: | Sandoval, M. A. Toloza Silva, A. Ferreira da Silva, E. A. de Andrada e Rocca, G. C. La |
Abstract: | The spin-orbit interaction strength for electrons in III-V semiconductor heterojunctions and the corresponding in-plane anisotropy are theoretically studied, considering Rashba and Dresselhaus contributions. Starting from a variational solution of Kane's effective Hamiltonian for the Rashba-split subbands, the total spin-orbit splitting at the Fermi level of the two-dimensional electron gas in III-V heterojunctions is calculated analytically, as a function of the electron density and wave-vector direction, by adding the Dresselhaus contribution within quasidegenerate first-order perturbation theory. Available GaAs and InGaAs experimental data are discussed. Effects of the barrier penetration are identified, and the spin-orbit anisotropy is shown to be determined by more than one parameter, even in the small-k limit, contrary to the commonly used α/β (where α is the Rashba and β the Dresselhaus interaction) single-parameter picture. |
metadata.dc.publisher.country: | Brasil |
metadata.dc.rights: | Acesso Aberto |
URI: | http://repositorio.ufba.br/ri/handle/ri/17070 |
Issue Date: | 2013 |
Appears in Collections: | Artigo Publicado em Periódico (FIS) |
Files in This Item:
File | Description | Size | Format | |
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M. A. Toloza Sandoval.pdf | 423,27 kB | Adobe PDF | View/Open |
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