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https://repositorio.ufba.br/handle/ri/16561
metadata.dc.type: | Artigo de Periódico |
Título : | Mesoscopic spin-orbit effect in the semiconductor nanostructure electron g factor |
Otros títulos : | Physical Review B |
Autor : | Sandoval, M. A. Toloza Silva, A. Ferreira da Silva, E. A. de Andrada e Rocca, G. C. La |
metadata.dc.creator: | Sandoval, M. A. Toloza Silva, A. Ferreira da Silva, E. A. de Andrada e Rocca, G. C. La |
Resumen : | The renormalization of the electron g factor by the confining potential in semiconductor nanostructures is considered. A new effective k⋅p Hamiltonian for the electronic states in III–V semiconductor nanostructures in the presence of an external magnetic field is introduced. The mesoscopic spin-orbit (Rashba type) and Zeeman interactions are taken into account on an equal footing. It is then solved analytically for the electron effective g factor in symmetric quantum wells (g∗QW). Comparison with different spin quantum beat measurements in GaAs and InGaAs structures demonstrates the accuracy and utility of the theory. The quantum size effects in g∗QW are easily understood and its anisotropy Δg∗QW (i.e., the difference between the in-plane and perpendicular configurations) is shown to be given by a mesoscopic spin-orbit effect having the same origin as the Rashba one. |
metadata.dc.publisher.country: | Brasil |
metadata.dc.rights: | Acesso Aberto |
URI : | http://repositorio.ufba.br/ri/handle/ri/16561 |
Fecha de publicación : | 2012 |
Aparece en las colecciones: | Artigo Publicado em Periódico (FIS) |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
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M. A. Toloza Sandoval.pdf | 427,58 kB | Adobe PDF | Visualizar/Abrir |
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