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Photoinjected carrier's acoustic plasma oscillations

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dc.contributor.author Esperidião, Antônio Sérgio Cavalcante
dc.contributor.author Vasconcellos, Aurea R.
dc.contributor.author Luzzi, Roberto
dc.creator Esperidião, Antônio Sérgio Cavalcante
dc.creator Vasconcellos, Aurea R.
dc.creator Luzzi, Roberto
dc.date.accessioned 2013-01-15T19:10:40Z
dc.date.available 2013-01-15T19:10:40Z
dc.date.issued 1989
dc.identifier.issn 0038-1101
dc.identifier.uri http://www.repositorio.ufba.br/ri/handle/ri/7873
dc.description Texto completo. Acesso restrito. p. 1 - 3 pt_BR
dc.description.abstract Resorting to the Nonequilibrium Statistical Operator Method (NSOM) we calculate the Raman spectrum of the double (electrons and holes) photoinjected plasma in direct-gap polar semiconductors. It allows us to identify four types of elementary excitations in the photoexcited carrier system. Besides the expected Raman bands corresponding to single quasi-particle excitations and a higher frequency plasma wave (labelled optical), there appear two low-frequency bands. They show a linear energy dispersion relation and are labelled acoustic plasma oscillations. While the optical plasma branch is ascribed to the out of phase collective movement of both types of carriers interacting through the bare Coulomb interaction, the acoustic branches are ascribed to the in-phase oscillation of each type of carriers interacting through the screened part of Coulomb interaction. pt_BR
dc.language.iso en pt_BR
dc.publisher Solid-State Electronics pt_BR
dc.source http://dx.doi.org/10.1016/0038-1101(89)90218-9 pt_BR
dc.title Photoinjected carrier's acoustic plasma oscillations pt_BR
dc.title.alternative Solid-State Electronics pt_BR
dc.type Artigo de Periódico pt_BR
dc.description.localpub Salvador pt_BR
dc.identifier.number v. 32, n. 12 pt_BR


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