Enhanced spin susceptibility in phosphorus-doped silicon

Silva, A. Ferreira da

dc.contributor.author	Silva, A. Ferreira da
dc.creator	Silva, A. Ferreira da
dc.date.accessioned	2013-11-03T13:44:56Z
dc.date.available	2013-11-03T13:44:56Z
dc.date.issued	1988
dc.identifier.issn	1098-0121
dc.identifier.uri	http://repositorio.ufba.br/ri/handle/ri/13517
dc.description	p. 55-56	pt_BR
dc.description.abstract	The influence of the many-valley isotropic effect of the conduction band with a variational Xz dependence on the metal-nonmetal transition of doped semiconductors is investigated further in the calculation of spin susceptibility. A previously developed Gutzwiller method for finite temperature is used. Good agreement with experimental findings is found.	pt_BR
dc.language.iso	en	pt_BR
dc.publisher	Physical Review B	pt_BR
dc.source	10.1103/PhysRevB.38.10055	pt_BR
dc.title	Enhanced spin susceptibility in phosphorus-doped silicon	pt_BR
dc.title.alternative	Physical Review B	pt_BR
dc.type	Artigo de Periódico	pt_BR
dc.description.localpub	Salvador	pt_BR
dc.identifier.number	v. 38, n. 14	pt_BR