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Please use this identifier to cite or link to this item: http://repositorio.ufba.br/ri/handle/ri/8096

Title: Optical characterization and metal–nonmetal transition of boron-doped Si1−xGex alloy
Other Titles: Solid-State Electronics
Authors: Silva, A. Ferreira da
An, C. Ying
Souza, J. Caetano de
Alves, A. Santos
Silva, T. Souza da
Dantas, Nilton Souza
Almeida, J. Souza de
Silva, A.V. Batista da
Pepe, Iuri Muniz
Issue Date: 1999
Abstract: We report measurements of the optical band gap of Si1−xGex, by photoacoustic spectroscopy technique. The material has been obtained by a mechanical alloying process. Due to its technological application, in high-performance bipolar transistors and integrated circuits, the interest in the physical properties of Si1−xGex has recently increased. The metal–nonmetal transition (for x=0.2) is determined to be 3.2×1018 cm−3. The optical band gap estimated from the absorption data at high boron concentration shows band gap narrowing when compared to the undoped alloy.
Description: Texto completo: acesso restrito. p.17–20
URI: http://www.repositorio.ufba.br/ri/handle/ri/8096
ISSN: 0038-1101
Appears in Collections:Artigos Publicados em Periódicos (FIS)

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