Please use this identifier to cite or link to this item: https://repositorio.ufba.br/handle/ri/7870
metadata.dc.type: Artigo de Periódico
Title: Influence of valley-splitting in the specific heat of Si:P
Other Titles: Solid State Communications
Authors: Perondi, L.F.
Fabbri, M.
Silva, A.Ferreira da
metadata.dc.creator: Perondi, L.F.
Fabbri, M.
Silva, A.Ferreira da
Abstract: We report a calculation of the electronic specific heat near 0 K for the Si:P system, taking into account the characteristic valley-splitting of the impurity levels near the conduction band minima. This effect is shown to describe properly the deviations from the free-electron model around the metal-to-nonmetal transition. This is a strong argument towards the picture of an Anderson-type (disorder-dominated) transition in indirect gap semiconductors. Our results account very well for the experimental findings.
Publisher: Solid State Communications
URI: http://www.repositorio.ufba.br/ri/handle/ri/7870
Issue Date: 1990
Appears in Collections:Artigo Publicado em Periódico (FIS)

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